| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, enabling the easy forming of bit lines and the increase of the circuit speed by expanding the operation margin of sense amplifiers. SOLUTION: After forming elements composed of a gate oxide film 11, gate electrodes 6, etc., on memory cells and array part, an inter-layer insulation film 4 is formed to result in a rough surface. After forming an n-type polysilicon film 7 on the entire surface, the surface is polished into a flat surface. The flattened polycrystalline silicon film 7 is patterned to form bit lines 10. |
