发明名称 |
MANUFACTURING CIS THIN FILM SOLAR CELL AND FORMING COPPER-INDIUM-SELENIUM ALLOY |
摘要 |
PROBLEM TO BE SOLVED: To improve the photoelectric conversion efficiency avoiding peel of a CIS layer of a solar cell by forming a Se layer or Se-containing layer adjacent to a conductive layer by plating. SOLUTION: A Cr layer 2 and Mo (conductive) layer thereon are sputtered on a soda lime glass 1 to form a substrate, and Se or Se-containing layer 4 is formed thereon by plating pref. electroplating to make a more smooth surface of the Se layer 4. For forming a Se or Se alloy layer by electroplating, a plating bath contg. a selenium dioxide water soln. (selenious) acid with sulfuric acid is pref. A brightener such as sodium citrate is pref. added to further reduce the uneven thickness. |
申请公布号 |
JPH09321326(A) |
申请公布日期 |
1997.12.12 |
申请号 |
JP19960137080 |
申请日期 |
1996.05.30 |
申请人 |
YAZAKI CORP |
发明人 |
TOYODA KAZUHIRO;MOCHIZUKI NORIO;NAKAGAWA SHINICHI;KAMIYA TAKESHI;IKETANI TAKESHI;SATO KENJI |
分类号 |
H01L31/04;C23C2/02;C23C2/04;C25D5/10;C25D5/50;H01L31/032;H01L31/0336 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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