| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which an ID (drain current)-VG (gate voltage) characteristic the same as a memory cell transistor(MCT) is realized, reliability is secured for a long time, and chip size is small and which as accuracy with a simple circuit, even if a single gate type NMOS is used as a reference cell transistor(RT) in the case of obtaining a reference voltage characteristic of a sense amplifier(SA). SOLUTION: In a non-volatile memory in which a stack gate type NMOS, provided with a floating gate, is used for MCT 1 and a differential amplifier system is used for SA3, a single gate type NMOS is used for a RT4 being a dummy memory cell to obtain VREF voltage of the SA3. An intermediate potential voltage-divided by capacity elements C1, C2 connected in series is supplied as gate voltage of the RT4, and a capacity ratio of the capacity elements C1, C2 is set to almost the same capacity ratio of the MCT1.</p> |
