发明名称 THIN FILM TYPE ELECTRON SOURCE AND APPLIANCE EMPLOYING IT
摘要 <p>PROBLEM TO BE SOLVED: To make deterioration of an insulating layer hardly occur by making an upper part electrode have three layer structure by sandwiching an interlayer between an interface layer and a surface layer. SOLUTION: An upper part electrode 11 comprises three-layer thin film consisting of an interface layer 16, an interlayer 17, and a surface layer 18 and the sublimation enthalpy of the material of the layer 17 is set to be higher than that of the material of the layer 18 and to be lower than that of the material of the layer 16. Consequently, a thin film electron source which is not deteriorated even after a long time operation can be materialized. Further, by optimizing the thickness of the layer 16, high emission electric current density can be stably obtained. Moreover, in the case the demand of conductivity to the electrode 11 is moderate, the electrode 11 is constituted of two layers of the layer 16 and the layer 17 and Pt is used as the material of the layer 17 and a material having higher sublimation enthalpy than Pt is used for the layer 16, so that the same effect can be provided. An image display apparatus with high brightness and a long life and a high speed electron beam drawing apparatus can be obtained by employing this thin film electron source for the display apparatus and the electron beam drawing apparatus.</p>
申请公布号 JPH09320456(A) 申请公布日期 1997.12.12
申请号 JP19960314502 申请日期 1996.11.26
申请人 HITACHI LTD 发明人 SUZUKI MUTSUZOU;KUSUNOKI TOSHIAKI
分类号 H01J1/30;H01J1/312;H01J19/24;H01J29/04;H01J31/12;H01J37/073;(IPC1-7):H01J1/30 主分类号 H01J1/30
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