WIRING STRUCTURE FOR CAPACITY ELEMENT OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a wiring structure which can remove the influence of the parasitic capacitance of connection wiring in a capacity element by drawing leaders for unit electrodes and for a counter electrode in different directions and sufficiently detaching the connection wrings which are connected. SOLUTION: Since the unit electrodes U1-Un and the counter electrode OE are formed by polysilicon and they form inner resistance, the counter electrode OE and the leader OL are connected on all the positions corresponding to the respective unit electrodes U1-Un for precisely setting individual capacitors as pairs with the unit electrodes U1-Un. Then, the leaders UL1, UL2 and OL are drown along the array direction of the unit electrodes U1-Un in respective unit electrode groups CG1-CGn. Then, OL and L1, L2 are drawn out in opposite directions. A space between L1 and L3 and that between L2 and L3 are sufficiently separated. The generation of parasitic capacitance between L1 and L3 and that between L2 and L3 is sufficiently reduced to a degree that it has no practical problem and the precision of the capacitor element can be improved.