MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To avoid oxidizing the surface of a metal film in a step of depositing an etch stopper insulation film on the tops of gate electrodes, including the metal film at forming holes for connecting a wiring on source and drain regions of MISFETs, utilizing a self align contact technique. SOLUTION: Forming a silicon nitride film 7 as a cap insulation film on gate electrodes 6 (word lines WL) at 500 deg.C or less suppresses the oxidizing of the surface of a W film forming a part of the gate electrodes 6 (word lines WL). Forming a silicon nitride film composing side wall spacers 9 of the gate electrodes 6 (word lines WL) at 500 deg.C or less suppresses the oxidizing of the surface of the W film exposed on the side walls of the gate electrodes 6 (word lines WL).