| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable non-volatile semiconductor device which suppresses the deterioration of a characteristic on a ferroelectric film by assuming the ferroelectric film as a perovskite structure compound containing lead containing at least one of the elements of Ho, Co, Cr, Dy, W, Y, V, Sm and Gd. SOLUTION: An inter-element separation insulating film 2, a diffusion layer 4, a gate insulating film 3 and a gate electrode 22 are formed on a semiconductor substrate 1. An inter-layer insulating film 5 is deposited as a MOS transistor 20 and a lower electrode 11 and the ferroelectric film 12 are formed. Then, RTA annealing is executed and an upper electrode 13 is formed and annealing is executed. Then, the lower electrode 11, the ferroelectric film 12 and the upper electrode 13 are patterned so as to form the capacitor 10 of MFM structure. Then, annealing is executed, the insulating film 15 and a contact hole are formed. Then, annealing is executed, internal wirings 31A and B are formed and a passivation film 6 is deposited on the whole element. Then, an external wiring 33 is formed through a barrier layer 32. Thus, the deterioration of switching charge quantity after thermal treatment can be suppressed and a memory cell with high yield can be provided. |
