SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURE OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a high performance and multifunctional semiconductor manufacturing apparatus and the manufacturing method of a thin film transistor, in the thin film transistor manufacturing technology including a laser irradiation process. SOLUTION: A silicon thin film 201 is formed on a glass substrate 202 and a laser beam 203 irradiates the silicon thin film 201 to obtain a recrystallized silicon film. Also, the recrystallized silicon film is subjected to a hydrogen plasma treatment to terminate unbonding arms of silicon and, further, a silicon dioxide film 205 is formed on the recrystallized silicon film. The work is not exposed to the air at least in those processes and, further, the treatment temperature is not higher than 350 deg.C.