发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To improve adhesion of a resist pattern to a wafer, by bonding the same protecting group as the protecting group of resist of chemical amplification type positive resist to hydroxyl group on the wafer surface in performing wafer surface treatment. SOLUTION: At the surface treatment of a wafer 1, the same protecting group as the protecting group of resin of chemical amplification type resist 2 is bonded to hydroxyl group on the surface. Protecting group which is easier of acid decomposition than the protecting group of resin of the resist 2 is bonded to the same hydroxyl group. At the surface treatment of the wafer 1, material having diazonaphthoquinone is hydrogen-bonded to hydroxyl group on the surface. The material having diazonaphthoquinone and resist resin are polymer composed of the same monomer. When chemical amplification type positive resist is used as resist, the protecting group of the resist resin is a tertiary butoxy carbonyl group. The tertiary butoxy carbonyl group is bonded, as the protecting group, to hydroxyl group on the wafer 1 surface, which is made lipophilic.
申请公布号 JPH09320929(A) 申请公布日期 1997.12.12
申请号 JP19960131991 申请日期 1996.05.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUJITA KOICHIRO
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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