发明名称 ABRASIVE, ITS MANUFACTURING METHOD AND INSULATING FILM FLATTENING METHOD ON SEMICONDUCTOR SUBSTRATE USING THE ABRASIVE
摘要 PROBLEM TO BE SOLVED: To obtain a grinding speed by using abrasive containing a specific weight part of alminium oxide and/or silicon oxide and a specific weight part of oxide cesium and by specifying a particle diameter. SOLUTION: This abrasive contains alminium oxide particle powder or silicon oxide particle powder which has a means particle diameter (a means secondary particle diameter) being less than about 2&mu;m, preferably about 0.2&mu;m - about 1.0&mu;m measured by a light scattering method (micro-track) and cerium oxide having about 5 weight part - about 25 weight part, preferably about 8 weight part - about 20 weight part per base metal oxide 100 weight part in terms of Ce. Additionally BET specific area of the abrasive being about 40 - about 150m<2> /g, preferably about 40 - about 100m<2> /g and more preferably about 40 - about 70m<2> /g is recommended. By the means high grinding performance is generated without using alkaline metal such as NaOH, KOH and so on together and the abrasive which has few alpha radiation causing defect generation of scratch or orange beer or generation of soft error can be obtained.
申请公布号 JPH09321003(A) 申请公布日期 1997.12.12
申请号 JP19960125508 申请日期 1996.05.21
申请人 SUMITOMO CHEM CO LTD 发明人 UEDA KAZUMASA;TAKEUCHI YOSHIAKI
分类号 B24B37/00;C09K3/14;H01L21/304 主分类号 B24B37/00
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