SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a manufacturing method thereof which has a charge pump circuit high a high pressure booster function, making it fine and reducing the power consumption. SOLUTION: The memory cell part of the semiconductor memory device is composed of floating gate transistors having floating gate electrodes 4 formed through a first gate insulation film 3 on a principal plane of a semiconductor substrate 1 and control gate electrodes 6 formed on the floating gate electrodes 4 through a first insulation film 5. The charge pump circuit is compose of series connected diode elements on a thick insulation film and capacitors connected to terminals of the diode elements.