| 摘要 |
PROBLEM TO BE SOLVED: To suppress the power consumption of a semiconductor device by restricting the OFF-current of a field-effect transistor to effectively lower its threshold voltage. SOLUTION: The gate is composed of a low-concn. polysilicon semiconductor layer 13 having impurity concn. of 1×10<17> -9×10<18> cm<-3> and metal layer 6 of Ti, Mo, W, TiSi, MoSi or WSi to form a Schottky barrier between both. By utilizing the ripple overshoot of a voltage applied to the gate of the field-effect transistor and the Schottky barrier, charges are accumulated between the semiconductor layer 13 and a metal layer 6 to provide a more intensive OFF-state while ions are implanted in other than working layers to avoid damaging the layers of the semiconductor device.
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