MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of transistor characteristics due to the nonuniform irradiation intensity distribution on an " irradiated region at laser annealing to form a p-type Si of a p-type Si TFTLCD. SOLUTION: A line beam is irradiated so as to form edge lines in directions S1, S2 at 40 deg. to the vertical or horizontal axis of a substrate to be treated. This results in that a linear poorly crystallized region R' having a grain size not enough increased because of the dispersion of the line beam intensity crosses 45 deg. on a carrier path between the source S and drain D and hence never completely breaks the contacts CT of the source and drain. Thus, a charge moving path CP between the contacts CT is ensured to avoid reducing the ON-current, without passing the poorly crystallized region R'.