SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which an exposed part of a separation region of a groove embedding type is prevented from being removed by etching when a connection hole is opened by providing a stopper in a region exposing from the connection hole in the groove embedding type separation region. SOLUTION: A groove embedding type separation region 2 for separating devices is formed on a semiconductor substrate is. The separation region 2 is formed by embedding a two-layered separation film 2b in a separation groove 2a cut in the semiconductor substrate 1s. The separation film 2b is constructed by sequentially depositing a separation film (stopper part) 2b1 and a separation film 2b2. The lower separation film 2b1 functions as an etching stopper when a connection hole from which a semiconductor region of the semiconductor substrate is exposed is opened by an etching process in an interlayer insulating film on the semiconductor substrate 1s. The separation film 2b1 is made of a material having a large selectivity to the interlayer insulating film.