| 摘要 |
PROBLEM TO BE SOLVED: To avoid the yield reduction due to the anti-oxidation breakdown of a nitride film by forming a capacitor insulation film to form memory cells of a DRAM, without the anti-oxidation breakdown of the nitride film. SOLUTION: A Si substrate 1 has transistors TR and a silicon oxide film 8 covering these transistors. A first polysilicon film 2 to form lower electrodes of memory cells is deposited and patterned on the substrate 1, a first nitride film 3 is deposited and etched back to form nitride side walls 4 at portions of the first polysilicon film 2 contacting a lower silicon oxide film 8 at the patterning edges of the polysilicon film 2. A second nitride film 5 is deposited and oxidized to form a thin silicon oxide film 6, and second polysilicon film 7 to be upper electrodes is deposited to form memory cells. |
