发明名称 MICROELECTRONIC DEVICE HAVING THIN FILM ELECTROSTATIC DISCHARGE PROTECTIVE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To protect an integrated circuit from ESD(Electrostatic Discharge). SOLUTION: A conductive ground or power plane and an ESD protective layer 22 are formed on a structure 12 mounting an integrated circuit 14. Terminals 24a, 24b such as solder balls are formed on the substrate and electrically connected to the device. The protective layer 22 is partly disposed between the terminal and the face and defines vertical discharge parts. An electrostatic potential applied to terminals during ESD phenomenon makes the protective layer 22 conductive at the discharge paths, this shunting the electrostatic potential from the terminals to the planes.
申请公布号 JPH09321220(A) 申请公布日期 1997.12.12
申请号 JP19970018763 申请日期 1997.01.31
申请人 LSI LOGIC CORP 发明人 JIEEMUZU DABURIYUU HIBUREE
分类号 H01L27/04;H01L21/56;H01L21/60;H01L21/822;H01L23/31;H01L23/60;H01L23/62;H01L29/74 主分类号 H01L27/04
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