| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOS transistor with high operation speed and a small short channel effect. SOLUTION: With a mask of a gate electrode 4, boron ions are implanted to form a P-layer 6. An oxidation treatment is carried out at 900 deg.C with an oxygen atmosphere to form an oxide film 7 with 20nm on a source/drain region. Arsenic ions are implanted with energy of 10KeV and the amount of dose of 1×10<13> /cm<2> Then, the arsenic ions are injected only through a neck part to the substrate. As a result, an N-layer 8 is formed selectively at only the part just under the gate edge. A spacer 24 is formed at a side face of the gate electrode, and BF2 ions are implanted with a mask of the spacer 24 to form a P<+> layer 9.
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