METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, PHOTOMASK, AND METHODS OF MANUFACTURING PHOTOMASK

摘要

A semiconductor integrated circuit device manufacturing method includes an exposure step of transferring a mask pattern which is formed on a photomask (26) and includes a mask line pattern and a mask space pattern onto the surface of a semiconductor wafer (10). The photomask (26) has a minimum transmittance section (51) which is so formed as to correspond to the line pattern transferred to the wafer (10) and has the minimum transmittance, a slit-like maximum transmittance section (52) which is formed outside the section (51) and has the maximum transmittance, and an intermediate transmittance section (53) which is formed in the other area (47) than the sections (51 and 52) and has an intermediate transmittance between the minimum and maximum transmittances. The light to which the surface of the wafer (10) is exposed has a sharp intensity distribution at the edge of the line pattern, and the resolution of the pattern is improved.