| 摘要 |
forming plural BN+ regions by injecting n-type impurity into a p-well region on an n-type semiconductor substrate; forming an oxide film over the whole front side; forming plural insulating layers on the oxide film in order to cross with the BN+ region perpendicularly; forming an erase gate on the insulating layer; forming an oxide film on the erase gate; forming plural floating gates on the intersection of the BN+ region and the erase gate in order to be overlapped with the BN+ region and the erase gate; forming an oxide film on the floating gate; and forming several control gates in order to cross with the BN+ region perpendicularly and to overlap with the floating gate.
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