Voltage pumping circuit for solid state devices

摘要

The voltage pumped supply circuit has a level shifting stage 10 to control the gate electrode of a transfer transistor MP4 and a non overlapping circuit 20 to inhibit the overlapping of the pumping time and a charge transfer time. A well bias voltage stage 30 charges a pumping capacitor in order that the voltage is separate from that of a separate well bias voltage generator 40.