| 摘要 |
Disclosed is a fabrication method of metal pattern used for multi-metal interconnections. A first insulating layer including double oxide layers(17)(18) is formed on a gate electrode(16), and contact holes are formed by etching the first insulating layers(17)(18). In the contact hole, a first diffusion prevention film(19), a second insulating layer(20), and SOG(silicon on glass)(21) for flattening between metal interconnections are sequentially deposited. The SOG(21) is etch-back to expose the first diffusion prevention film(19), thereby preventing voids due to step-coverage within the contact hole and easily controlling an etch-endpoint.
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