| 摘要 |
<p>An insulated gate bipolar transistor is provided including a substrate (36) of a first conductivity type forming a drift region, a collector (32) disposed in the substrate adjacent a surface of the substrate remote from a source (40) and a channel region, in which at least a portion of the collector (32) is either the first or a second conductivity type and has an average doping level of the second conductivity type of no more than three orders of magnitude higher than the drift region. A thin lifetime control region is disposed at the interface (34) of the drift region and the collector.</p> |
