| 摘要 |
A fabrication method of flash memory device is provided to improve the uniformity of data erasing. The method comprises the steps of: forming a N-well(10) and a deep N-well(20) having a distance spaced apart from each other; forming a P-well(30) between the N-well(10) and the deep N-well(20); forming a P-well(40) in the deep N-well(20); forming a CMOS circuit having PMOS formed in the N-well(10) and NMOS( formed in the P-well(30); and forming a NMOS memory cell in the P-well(40) formed in the deep N-well(20). Thereby, it is possible to improve the uniformity of data erasing by simultaneously applying the voltage to the deep N-well(20) and the P-well(40).
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