| 摘要 |
A capacitor manufacturing method of a semiconductor device connects a thin film substrate to a semiconductor substrate, forms two cells controlled by one bit line on the same area, and adjusts a characteristic of a thin film MOS-FET using a substrate voltage, identically with a substrate MOS-FET. The method increases the number of reliable basic chips by two times by using a semiconductor substrate of the same area, thereby reducing a production cost.
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