Growing silicon germanium mixed crystal, for use in micro-and optoelectronics

摘要

The process for mixed crystal pulling by the Czochralski method involves (a) producing a melt (1) of at least one component in a crucible (2); (b) fixing a solid additive component in the growth chamber (6) above the melt (1); (c) adjusting the thermal equilibrium and stabilising the pulling process; and (d) raising the crucible (2) at a predetermined velocity so that the additive component dips into and is continuously dissolved in the melt (1), while contra-rotating the crucible (2) and the seed crystal (3) and synchronising the additive component immersion velocity (Vst) and the mixed crystal (7) pulling velocity. Also claimed is a pulling chamber for carrying out the above process.