FABRICATION OF GATED ELECTRON-EMITTING DEVICE UTILIZING DISTRIBUTED PARTICLES TO DEFINE GATE OPENINGS

摘要

An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.