| 摘要 |
The invention concerns a method of reading and refreshing data contents of a dynamic semiconductor memory comprising a plurality of volatile storage locations disposed in matrix-like manner in columns and rows. Data contents are read from addressed storage locations by means of at least two data buses (DQ1, DQ2) to which the data contents are applied word-by-word. The data contents of the storage locations are refreshed by a refresh pulse. According to the invention, the data words (D1, D3) present at the data buses (DQ1, DQ2) when the refresh pulse has been triggered are maintained for a predetermined time interval at all the data buses, and only then switched off by a switch-off pulse. |
