| 发明名称 |
FIELD OXIDATION METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
The present invention relates to a method of making a field oxide film for a semiconductor device. According to this method, a trench is formed on a silicon substrate to prevent bird's beak, and a field oxide film is formed to thereby remove height difference of the silicon substrate by the field oxide film.
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| 申请公布号 |
KR0125313(B1) |
申请公布日期 |
1997.12.10 |
| 申请号 |
KR19940016089 |
申请日期 |
1994.07.06 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
PARK, SANG-HOON |
| 分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
| 代理机构 |
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