FABRICATION METHOD OF MOSFET

摘要

There is provided a method for fabricating a MOSFET having an increased effective channel length. The method includes: forming a semiconductor substrate(1) having a projected portion; depositing a gate oxide layer and a polysilicon layer(3) in the named order on the substrate(1); forming a LDD region at both side of the projected portion of the substrate(1); forming a silicide layer(7) on the polysilicon layer(3); forming a spacer(5) at side walls of the projected portion by depositing a low temperature oxide layer on the silicide layer(7) and performing an anisotropic blanket etch; removing the silicide layer and the polysilicon layer on the substrate except the projected portion and adjacent portion thereof; and forming source/drain regions in the substrate.