METHOD OF AMORPHOUS SILICON EVAPORATION

摘要

An amorphous silicon deposition method at three-zone LPCVD(low pressure chemical vapor deposition) reactor is disclosed. The method comprises the steps of: controlling a temperature of zone by positive temperature gradient in three-zone horizontal reactor(1); injecting a source gas in the inner of the reactor(1) through a gas inlet(12); depositing a silicon on a wafer(2) by flowing the injected source gases; removing the remained residue gases by flowing N2 gases; closing a vacuum pump line(9) and flowing N2 gases; opening a reactor door(5); and unloading the growing wafer, thereby forming an wafer deposited the amorphous silicon.