| 摘要 |
A fabrication method of a TFT(thin film transistor) is provided to improve the breakdown voltage and remove the electro-static breakdown. The method comprises the steps of: forming a gate electrode(2) and a first anode oxidation layer(8) on a glass substrate(1); forming a second anode oxidation layer(8'); sequentially forming a gate insulator(3), an amorphous silicon(4) and an amorphous silicon layer(5); forming source/drain electrodes(6); dry etching the n+ amorphous silicon layer(5) between the source and drain electrodes(6); and forming a transparent electrode(7) made of ITO. Thereby, it is possible to increase the breakdown voltage between the gate electrode(2) and the source/drain electrodes(6).
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