| 摘要 |
On the occasion of implantation of high density ion on a semiconductor substrate(1) or on the oxide film(2) on the semiconductor substrate, photoresist(3) to be used as selective protective film, will be spread on them, and in order to remove only the photoresist from the area where ion will be implanted, pattern through photo exposure and development process, and implant ions such as Aa, BF2(4) etc. Then, remove photoresist(3) through the washing process, and the remaining ion oxide material by washing.
|
