DUMMY PATTERNING METHOD OF SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method of making a dummy pattern for preventing crack of insulating film. When etching to form a contact hole on an insulating film during manufacture of a semiconductor device, a crack occurs on a monitor box applied on a scribe line to check the etching degree and its edge by thermal treatment to break the insulating film. In order to solve this problem, a dummy pattern is formed to a height an a given width on a peripheral circuit region around the monitor box and/or in the cell region, so that the crack, commonly occurring at the edge of the monitor box, affects adversely the insulating film.