| 摘要 |
<p>A method of compensating for proximity effects in electron beam lithography systems is disclosed. An uncorrected dose profile is obtained for the pattern features to be introduced into a layer of electron beam sensitive material, including a determination of the clearing dose for the electron beam sensitive resist and the dose height for each edge of the pattern feature. Thereafter the incident dose of exposure energy for introducing an image of the pattern into a layer of electron beam sensitive material is adjusted by designating the clearing dose for each edge of the pattern feature as a function of the dose height. The uncorrected dose profile for determining the dose height and the clearing dose is optionally obtained from a calibration step. Each feature is optionally partitioned into a plurality of subshapes and the incident dose of exposure energy is then adjusted for each edge of each subshape by designating the clearing dose for each edge of each subshape as a function of the dose height. <IMAGE></p> |
