发明名称 Developed resist material and fabrication method thereof
摘要 <p>A resist material having a resist (2) and particles (5) mixed into the resist, a major component of the particles being a cluster of carbon atoms, is provided. A method for fabricating a resist material is also provided, the method repeatedly performing: a first step of coating a substrate with a resist film; and a second step of depositing particles whose major component is a cluster of carbon atoms on the resist film. Accordingly, a resist film with high etching resistance can be obtained, and it is possible to realize a reduction in the thickness of the resist film, improvements of contrast of resist patterns; resist sensitivity; heat resistance of resist films; mechanical strength of resist patterns; and further, stabilization of resist sensitivity. Therefore, highly precise fine pattern fabrication can be realized. <IMAGE> <IMAGE> <IMAGE></p>
申请公布号 EP0811879(A1) 申请公布日期 1997.12.10
申请号 EP19970303941 申请日期 1997.06.06
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 ISHII, TETSUYOSHI;NOZAWA, HIROSHI;TAMAMURA, TOSHIAKI;KURIHARA, KENJI
分类号 G03F7/004;G03F7/008;G03F7/022;G03F7/038;G03F7/039;G03F7/09;(IPC1-7):G03F7/022 主分类号 G03F7/004
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