发明名称 |
Developed resist material and fabrication method thereof |
摘要 |
<p>A resist material having a resist (2) and particles (5) mixed into the resist, a major component of the particles being a cluster of carbon atoms, is provided. A method for fabricating a resist material is also provided, the method repeatedly performing: a first step of coating a substrate with a resist film; and a second step of depositing particles whose major component is a cluster of carbon atoms on the resist film. Accordingly, a resist film with high etching resistance can be obtained, and it is possible to realize a reduction in the thickness of the resist film, improvements of contrast of resist patterns; resist sensitivity; heat resistance of resist films; mechanical strength of resist patterns; and further, stabilization of resist sensitivity. Therefore, highly precise fine pattern fabrication can be realized. <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP0811879(A1) |
申请公布日期 |
1997.12.10 |
申请号 |
EP19970303941 |
申请日期 |
1997.06.06 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
ISHII, TETSUYOSHI;NOZAWA, HIROSHI;TAMAMURA, TOSHIAKI;KURIHARA, KENJI |
分类号 |
G03F7/004;G03F7/008;G03F7/022;G03F7/038;G03F7/039;G03F7/09;(IPC1-7):G03F7/022 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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