SILICON-NITRIDE FILM FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for forming a silicon nitride film which can increase an yield is disclosed. The silicon nitride(Si3N4) film is manufactured by using reactors of NH3 and SiH2Cl2. For preventing particles due to sub-reaction, volume rates between NH3 reactor and SiH2Cl2 reactor is controlled to 4 : 3. Thereby, it is possible to increase yield by minimizing creation of particles.