发明名称 CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR DEVICE
摘要 A fabrication method of contact holes having fine patterns is disclosed. The method comprises the steps of: coating a positive PR layer(23) on an insulating layer(21); firstly exposing the positive PR layer(23) to form a first exposing region(25) and secondly exposing the positive PR layer(23) to form a second exposing region(26); thirdly exposing the PR layer(23) to form a third exposing region(27); fourth exposing the PR layer to form a fourth exposing region(28); developing the exposing regions(25,26,27,28) to form a PR pattern(23); and forming a fine contact hole(29) by etching the exposed insulating layer(21) using the PR pattern(23) as a mask. Thereby, it is possible to easily form contact holes having fine patterns.
申请公布号 KR0125294(B1) 申请公布日期 1997.12.10
申请号 KR19930028884 申请日期 1993.12.21
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 HAM, YOUNG-MOK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
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