| 摘要 |
There is provided a manufacturing method of MOSFET of semiconductor device. The method is comprised of forming the first oxidized film on upper part of semiconductor substrate, forming photosensitive film pattern on the upper part, forming a semiconductor substrate which is projected by etching the first exposed oxidized film and semiconductor substrate of it in a certain thickness, removing the photosensitive film pattern and the first oxidized film, entirely cumulating a gate oxidized film and polysilicon layer, forming a photosensitive film pattern encircling the projected part of the polysilicon layer and etching the exposed poly-silicon layer in a certain thickness, removing the photosensitive film pattern, forming LDD domain by injecting low concentrated ion into semiconductor substrate, forming PSG film spacer on the side wall of the poly-silicon layer, forming source/drain domain by ion-injecting high concentration impurity into semiconductor substrate, forming polysilicon layer pattern for a gate electrode by etching the exposed polysilicon layer until gate oxidized film is exposed and insulating the side surface of the polysilicon layer pattern for the gate electrode by flowing the PSG film spacer in a high temperature processing, selectively forming transfer metal on the upper part of the source/drain domain and polysilicon layer pattern for gate electrode, and forming silicides through annealing.
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