| 摘要 |
All over a semiconductor evaporate NO.1 BPSG(9) undoped oxide film(10) and NO.2 BPSG(11) one after another In-Situ and after forming an interlayer insulator(12) composed of 3 layers, using CMP method, polish the interlayer insulator. By this polishing, 6000 angstrom of NO.2 BPSG film of the memory cell area is all polished and among the 1000 angstrom-thick undoped oxide film, 700 angstrom is polished, that leaves 300 angstrom-thick undoped oxide film and 3000 angstrom- thick NO.1 BPSG film to remain and makes 3,300 angstrom thick interlayer insulator film left.
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