发明名称
摘要 PURPOSE:To reduce power consumption and a cost and to obtain high picture quality by connecting a drain electrode of a thin film transistor to a light emitting element and a capacitor and connecting a power source to the other sides of the light emitting element and the capacitor connected in parallel. CONSTITUTION:A unit pixel provided with an amorphous silicon thin film field-effect transistor(TFT) 17 and an organic thin film EL element 18 which is the light emitting element of which luminance is controlled by a current flowing through the element is arranged on the vicinity of each crossing part between a scanning line 20 and a signal line 21 formed on a substrate in matrix. Then, the electrode of the TFT 17 is connected to the scanning line 20, and the source electrode is connected to the signal line 21 and the drain electrode is connected to the light emitting element 18 and the capacitor 19, respectively. Further, the other sides of the light emitting element 18 and the capacitor 19 connected in parallel are commonly connected to a power source electrode 52. Thus, the current flows through the light emitting element 18 through electrical charge stored in the capacitor 19 even after the TFT 17 is turned off, light emission is maintained, the voltage of the light emitting element 18 at the time of maximum luminance is reduced, a drive voltage is lowered, and a flicker in the light emitting element is suppressed.
申请公布号 JP2689917(B2) 申请公布日期 1997.12.10
申请号 JP19940208185 申请日期 1994.08.10
申请人 发明人
分类号 H05B33/08;G09F9/33;G09G3/20;G09G3/30;G09G3/32;H01L51/50;H05B33/12 主分类号 H05B33/08
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