| 摘要 |
A semiconductor memory device includes a memory cell, a word line, a bit line pair having a first bit line and a second bit line complementary to the first bit line, a p type well, first and second source lines, a source line precharge circuit for precharging the first and second source lines, a sense amplifier connected between the first and second bit lines, driven by the first and second source lines and including first and second n channel MOS transistors formed in the p type well and third and fourth p channel MOS transistors, a first sense amplifier enable transistor connected between a power supply potential node and the first source line, a second sense amplifier enable transistor connected between a ground potential node and the second source line, and a switching circuit connected between the first source line and the p type well, and turning on in response to a control signal when the sense amplifier is active.
|
