发明名称 |
Process of etching silicon nitride layer by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen |
摘要 |
A silicon nitride layer on a silicon oxide layer is selectively etched by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen, and the hydrogen bromide is large enough in vapor pressure to maintain the composition of the etching gas without a heater.
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申请公布号 |
US5695602(A) |
申请公布日期 |
1997.12.09 |
申请号 |
US19960650983 |
申请日期 |
1996.05.21 |
申请人 |
NEC CORPORATION |
发明人 |
TAKESHIRO, SHINICHI |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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