| 摘要 |
PROBLEM TO BE SOLVED: To obtain a slurry for polishing, having a polishing ability equal to those of conventional polishing slurries, low in the affection with an alkali metal, capable of being repeatedly used, contributing to the reduction of costs and useful for polishing semiconductor substrates, magnetic recording media, etc., by dispersing a polishing agent in a specific aqueous solution. SOLUTION: This slurry for polishing is obtained by dispersing (B) a polishing agent such as fumed silica in (A) an aqueous solution containing (A1 ) cesium hydroxide and, if necessary, further (A2 ) a cesium salt such as cesium chloride or cesium formate. The slurry is obtained e.g. adding the 50% aqueous solution of the component A1 having a purity of 99.6wt.% and, if necessary, further the 80% aqueous solution of the cesium formate having a purity of >=98.4wt.% or the powder of the cesium chloride having a purity of >=99.98wt.% to ultrapure water having an electric resistance of >=17MΩ so as to give a final slurry pH of 10.0-13.0, especially 11.5-12.5, and subsequently suspending the component B in the mixture in such an amount as to give a concentration of 5-15wt.%, especially 6.5-8.5wt.%, under stirring. |
