发明名称 |
Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes |
摘要 |
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
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申请公布号 |
US5696018(A) |
申请公布日期 |
1997.12.09 |
申请号 |
US19950487197 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUMMERFELT, SCOTT R.;REID, JASON;NICOLET, MARC;KOLAWA, ELZBIETA |
分类号 |
H01G4/33;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/92;(IPC1-7):H01L21/28 |
主分类号 |
H01G4/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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