发明名称 |
High voltage electronic amplifiers |
摘要 |
PCT No. PCT/US95/00933 Sec. 371 Date Oct. 23, 1995 Sec. 102(e) Date Oct. 23, 1995 PCT Filed Jan. 24, 1995 PCT Pub. No. WO95/20266 PCT Pub. Date Jul. 27, 1995Novel high voltage electronic amplifiers that are capable of being monolithically integrated using low voltage semiconductor fabrication processes are described and claimed. A cascade of low voltage current mirrors is described that can act as a high voltage amplifier output circuit. A transconductor and level shift circuit is also described that can be employed in the high voltage amplifier output circuit. A high voltage current source is described and is constructed from the series combination of a low voltage transistor and a parasitic field oxide transistor. Additionally, a differential amplifier having bias-current shunting transistors is described that can be used to limit quiescent current from the output power supply of the high voltage amplifiers.
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申请公布号 |
US5696459(A) |
申请公布日期 |
1997.12.09 |
申请号 |
US19950448554 |
申请日期 |
1995.10.23 |
申请人 |
ARITHMOS, INC. |
发明人 |
NEUGEBAUER, CHARLES F.;BRUNETTI, JON;STEINBACH, GUNTER |
分类号 |
H03K5/02;H03F3/00;H03F3/30;H03F3/343;H03F3/345;H03F3/45;H03K5/24;H03K17/10;H03K17/687;(IPC1-7):H03K17/14 |
主分类号 |
H03K5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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