发明名称 Sense amplified output control circuit
摘要 An improved sense amplifier output control circuit of a semiconductor memory device increases the operational speed and reduces possible noise. A sense amplifier senses a data read from a memory cell in accordance with a sense enable signal applied thereto. A Schmitt trigger circuit outputs the same level signal when the level difference between a data signal outputted from the sense amplifier and a data bar signal inverted from the data signal is below a predetermined value, and outputs a different level signal when the level difference is increased more than a predetermined value. A data latch circuit inverts and outputs an output signal outputted from the Schmitt trigger circuit in accordance with a latch enable signal inputted thereto. A data output buffer outputs the same level signal as a data signal outputted from the sense amplifier when a signal outputted from the data latch circuit has a different level in accordance with an output enable signal inputted thereto.
申请公布号 US5696719(A) 申请公布日期 1997.12.09
申请号 US19960702372 申请日期 1996.08.23
申请人 LG SEMICON CO., LTD. 发明人 BAEK, DAE BONG;KWAK, SUNG HOON
分类号 G11C11/419;G11C7/06;G11C7/10;G11C11/407;G11C11/409;H03K19/0175;(IPC1-7):G11C7/00;G11C7/02 主分类号 G11C11/419
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