发明名称 |
Sense amplified output control circuit |
摘要 |
An improved sense amplifier output control circuit of a semiconductor memory device increases the operational speed and reduces possible noise. A sense amplifier senses a data read from a memory cell in accordance with a sense enable signal applied thereto. A Schmitt trigger circuit outputs the same level signal when the level difference between a data signal outputted from the sense amplifier and a data bar signal inverted from the data signal is below a predetermined value, and outputs a different level signal when the level difference is increased more than a predetermined value. A data latch circuit inverts and outputs an output signal outputted from the Schmitt trigger circuit in accordance with a latch enable signal inputted thereto. A data output buffer outputs the same level signal as a data signal outputted from the sense amplifier when a signal outputted from the data latch circuit has a different level in accordance with an output enable signal inputted thereto.
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申请公布号 |
US5696719(A) |
申请公布日期 |
1997.12.09 |
申请号 |
US19960702372 |
申请日期 |
1996.08.23 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
BAEK, DAE BONG;KWAK, SUNG HOON |
分类号 |
G11C11/419;G11C7/06;G11C7/10;G11C11/407;G11C11/409;H03K19/0175;(IPC1-7):G11C7/00;G11C7/02 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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