发明名称 |
RING OSCILLATOR CIRCUIT |
摘要 |
If a low signal being supplied in a gate between transistors MP1 and MN1, a P-type transistor MP1 is turned on to supply the charges to an output node N2; here, when the circumferential temperature of a chip is higher than the critical temperature, the current flowing through a PMOS transistor MP2 is increased and charges up the charges to an output node N2 rapidly compared with the low temperature situation; while the circumferential temperature of the chip is lower than the critical temperature, the current flowing through a PMOS transistor MP2 is decreased and charges up the charges to the output node N2 slowly compared with the high temperature situation.
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申请公布号 |
KR0121780(B1) |
申请公布日期 |
1997.12.05 |
申请号 |
KR19940017292 |
申请日期 |
1994.07.18 |
申请人 |
HYUNDAI ELECTRONICS CO.,LTD |
发明人 |
LEE, JAE-JIN;PARK, JIN-HO |
分类号 |
G11C11/406;(IPC1-7):G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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