发明名称 RING OSCILLATOR CIRCUIT
摘要 If a low signal being supplied in a gate between transistors MP1 and MN1, a P-type transistor MP1 is turned on to supply the charges to an output node N2; here, when the circumferential temperature of a chip is higher than the critical temperature, the current flowing through a PMOS transistor MP2 is increased and charges up the charges to an output node N2 rapidly compared with the low temperature situation; while the circumferential temperature of the chip is lower than the critical temperature, the current flowing through a PMOS transistor MP2 is decreased and charges up the charges to the output node N2 slowly compared with the high temperature situation.
申请公布号 KR0121780(B1) 申请公布日期 1997.12.05
申请号 KR19940017292 申请日期 1994.07.18
申请人 HYUNDAI ELECTRONICS CO.,LTD 发明人 LEE, JAE-JIN;PARK, JIN-HO
分类号 G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/406
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