SPUTTERING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a sputtering device capable of executing etching and film forming treatment in the same position by eliminating the influence of a chucking mechanism and making the potential in the space regiop near a substrate to be processed uniform. SOLUTION: The substrate retaining part 11 of the chucking mechanism is covered with a cover member 21 consisting of a grounded conductive material. The cover member 21 is previously provided with an aperture in order to expose only the substrate W and its peripheral part. The etching and film forming treatment are executed through the aperture. The cover member 21 is formed variably in its height position in order to avoid the interference with the chucking mechanism.