| 摘要 |
PROBLEM TO BE SOLVED: To ensure high resolution, high heat resistance, a wide focus latitude and superior resist pattern profile adaptable to high integration of a semiconductor circuit by using quinonediazidosulfonic ester of an arom. polyhydroxy compd., an alkali-soluble resin, a solvent and additives. SOLUTION: This photoresist compsn. consists of quinonediazidosulfonic ester, an alkali-soluble resin, a solvent and additives. The quinonediazidosulfonic ester is produced by esterifying 1,2-naphthoquinonediazidosulfonic acid halide or 1,2-benzoquinonediazidosulfonic acid halide with an arom. polyhydroxy compd. represented by the formula in the presence of an amine catalyst. In the formula, each of R1 and R2 is H, halogen, etc., (a) is a constant of 1-3, (b) is a constant of 1-8, (c) is a constant of 1-12 and R<3> is aliphatic hydrocarbon optionally contg. ether, etc. |
