| 摘要 |
A method for treating the surface of a silicon substrate, which has been subjected to a dry etching process, including applying an electron cyclotron resonance process to the exposed surface to thereby etch away a thin layer of the exposed surface. The ECR etching process is preferably conducted in an SF6-O2 gas mixture and the thickness of the thin layer is no greater than 500 ANGSTROM . The silicon wafer damaged and contaminated by the dry etching processes can be repaired to the level of virgin, bare silicon wafer by this method. This silicon wafer treatment method allows the semiconductor device thereby fabricated to have improved operating characteristics. For example, the leak current generated in a semiconductor device fabricated on the silicon wafer which has undergone the present treatment is markedly diminished to approximately one-tenth of the leak current generated in the semiconductor device fabricated on the silicon wafer which has not undergone this treatment.
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